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| MMBTSC3875 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC IB Ptot Tj TS Value 60 50 5 150 30 200 150 -55 to +150 Unit V V V mA mA mW O C C O SEMTECH ELECTRONICS LTD. (R) (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/10/2005 MMBTSC3875 Characteristics at Tamb=25 OC Symbol DC Current Gain at VCE=6V, IC=2mA Current Gain Group O Y G L Collector Emitter Saturation Voltage at IC=100mA, IB=10mA Collector Cutoff Current at VCB=60V Emitter Cutoff Current at VEB=5V Transition Frequency at VCE=10V, IC=1mA Collector Output Capacitance at VCB=10V, f=1MHz Noise Figure at VCE=6V, IC=0.1mA, f=1KHz, RG=10K NF 1 10 dB COB 2 3.5 pF fT 80 MHz IEBO 0.1 A ICBO 0.1 A VCE(sat) 0.25 V hFE hFE hFE hFE 70 120 200 300 140 240 400 700 Min. Typ. Max. Unit SEMTECH ELECTRONICS LTD. (R) (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/10/2005 MMBTSC3875 I C-VCE 280 COLLECTOR CURRENT IC (mA) h FE-IC 3K COMMON EMITTER 240 200 160 120 80 40 0 0 1 3.0 DC CURRENT GAIN h FE 6.0 COMMON EMITTER Ta=25o C 5.0 2.0 1.0 0.5 I B=0.2mA 0 2 3 4 5 6 1K 500 300 Ta=100o C Ta=25o C Ta=-25 oC VCE=6V 100 50 30 VCE=1V 10 0.1 0.3 1 3 10 30 100 300 COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) VCE(sat)-IC 3 COLLECTOR-EMITTER SATURATION VCE(sat) (V) BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) VBE(sat)-IC 30 COMMON EMITTER I C/IB=10 Ta=25o C COMMON EMITTER I C/IB=10 1 0.5 0.3 10 5 3 0.1 0.05 0.03 Ta=100o C Ta=25o C Ta=-25oC 0.3 1 3 10 30 100 300 1 0.5 0.3 0.01 0.1 0.1 0.1 0.3 1 3 10 30 100 300 COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA) fT-IE 3K TRANSITION FREQUENCY fT (MHz) I B-VBE COMMON EMITTER VCE=10V Ta=25o C 3K BASE CURRENT I B ( A) 1K 300 100 30 10 3 1 0.3 0 COMMON EMITTER VCE=6V T a=1 o 00 C Ta=2 o 5C Ta=-2 o 5C 1K 500 300 100 50 30 10 -0.1 -0.3 -1 -3 -10 -30 -100 -300 EMITTER CURRENT I E (mA) 0.2 0.4 0.6 0.8 1.0 1.2 BASE-EMITTER VOLTAGE VBE (V) SEMTECH ELECTRONICS LTD. (R) (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/10/2005 MMBTSC3875 h PARAMETER-I C 5K GR 1K 300 h PARAMETER h PARAMETER-VCE 5K 3K 1K 300 h PARAMETER BL Y O h iexk Y COMMON EMITTER VCE=12V,f=270Hz Ta=25o C h fe BL Y h oex BL O 100 30 10 3 1 0.3 0.1 0.1 GR GR BL 100 30 10 3 GR BL Y O h iexk COMMON EMITTER I C=2mA,f=270Hz Ta=25o C BL GR h fe Y O GR BL OY h oex BL GR Y O O Y O 0.3 h rex10 -4 1 GR 3 10 50 1 0.3 0.1 0.5 1 h rex10 -4 COLLECTOR CURRENT IC (mA) 3 10 30 100 300 COLLECTOR-EMITTER VOLTAGE VCE (V) PC-Ta 200 COLLECTOR POWER DISSIPATION PC (mW) 150 100 50 0 0 25 50 75 100 125 o 150 175 AMBIENT TEMPERATURE Ta ( C) SEMTECH ELECTRONICS LTD. (R) (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/10/2005 |
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